Citizen Portal
Sign In

Get Full Government Meeting Transcripts, Videos, & Alerts Forever!

Get email alerts on the Student Performance topic

No spam. Unsubscribe anytime.

Ralston middle school reports reading gains and outlines attendance strategy

Ralston Public Schools Board of Education · June 9, 2026
AI-Generated Content: All content on this page was generated by AI to highlight key points from the meeting. For complete details and context, we recommend watching the full video. so we can fix them.

Summary

Middle‑school leaders told the board they saw gains in MAP/NCAS scores (7th grade to about 49% proficient; 8th grade to about 56% unofficially), and described tiered interventions, ABC attendance meetings, MTSS/PBIS work and summer supports intended to reduce chronic absenteeism.

Middle‑school administrators reported measurable academic gains and a multi‑pronged approach to boost attendance at the Ralston Public Schools board meeting on June 8.

Presentation slides reviewed historic and current assessment results; staff said 7th‑grade proficiency rose to about 49% (from mid‑40s) and 8th grade to about 56% in preliminary/unofficial results. Administrators credited focused coaching, professional development, data monitoring and targeted small‑group interventions for the gains.

On attendance, the school outlined a twice‑monthly ABC meeting to triage chronic‑absence cases with counselors, social workers and contracted mental‑health therapists; interventions include tiered advisement, family engagement nights, transportation assistance (bus passes), incentives and partnership with community groups. The principal noted that summer supports, extracurricular activity engagement and targeted outreach can move individual students from chronically absent to regular attendance.

Trustees asked for data by building and for a clearer dashboard; presenters said the district can run infraction and attendance reports by time‑of‑day, location and referral source and that additional standardization of codes would aid cross‑building comparisons.